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2SC1881(K)
Silicon NPN Triple Diffused
Application
High gain amplifier power switching
Outline
Absolute Maximum Ratings (Ta = 25C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25C. Symbol VCBO VCEO VEBO IC I C(peak) PC * Tj Tstg
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Ratings 60 60 7 3 6 30 150 -55 to +150
Unit V V V A A W C C
2SC1881(K)
Electrical Characteristics (Ta = 25C)
Item Symbol Min 60 7 -- -- 1000 500 Collector to emitter saturation voltage Turn on time Turn off time Note: 1. Pulse test. VCE(sat) t on t off -- -- -- Typ -- -- -- -- -- -- -- 1 5 Max -- -- 0.2 0.4 -- -- 1.2 -- -- V s s Unit V V mA mA Test conditions I C = 50 mA, RBE = I E = 50 mA, IC = 0 VCB = 60 V, IE = 0 VCE = 30 V, RBE = VCE = 1.5 V I C = 1.5 A*1 I C = 2.5 A*1 I C = 2.5 A, IB = 20 mA*1 VCC = 11 V, IC = 2 A, I B1 = -IB2 = 8 mA Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current V(BR)EBO I CBO I CEO DC current transfer ratio hFE
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2SC1881(K)
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2SC1881(K)
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2SC1881(K)
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